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12K Multispectrum TDI-CMOS Image Sensor

TDI Line Scan · Multispectrum

General Description

I7 is a high resolution multi-spectrum CMOSTDI image sensor with embedded CCD pixels. The sensor is composed of 1 P zone and 4 B zones. P zone features 12K-pixel resolution with 128 TDI stages, pixel size 7um*7um. B zone features 3K-pixel resolution with 64 TDI stages, pixel size 28um*28um. It is designed
with radiation hardness to work reliably in the radiation environment.

Features
High sensitivity and high dynamic range
BSI with peak QE 85%
Highly Integrated SOC with on-chip clock driver, timing & control, ADC
Advanced design structure for better Full-Well and lower noise
Enhanced NIR performance
Super radiation hardness

Applications
 LEO Satellite Observation.
 Industrial Inspection.
 Scientific Research.


Key Parameters

ParameterP zoneB zone
Resolution12,288 px3,072 px
TDI stage12864
Pixel size7 µm × 7 µm28 µm × 28 µm
Full well80 Ke⁻240 Ke⁻
Total noise< 10 e⁻< 60 e⁻
Line rate100 KHz25 KHz
TDI directionBi-directionBi-direction
ADC14-bit14-bit
MTF0.500.50
FPN< 1.2%< 1.2%
PRNU< 1.5%< 1.5%
TID100 Krad100 Krad
SEE75 MeV·mg/cm²75 MeV·mg/cm²

6K Multispectrum TDI-CMOS Image Sensor

TDI Line Scan · Multispectrum

General Description

I8 is a high resolution multi-spectrum CMOSTDI image sensor with embedded CCD pixels. The sensor is composed of 1 P zone and 4 B zones. P zone features 6K-pixel resolution with 128 TDI stages, pixel size 10um*10um. B zone features 1.5K-pixel resolution with 64 TDI stages, pixel size 40um*40um. It is designed
with radiation hardness to work reliably in the radiation environment.

Features
⚫ High sensitivity and high dynamic range
⚫ BSI with peak QE 80%
⚫ Highly Integrated SOC with on-chip clock driver, timing & control, ADC
⚫ Advanced design structure for better Full-Well and lower noise
⚫ Enhanced NIR performance
⚫ Super radiation hardness

Applications
 LEO Satellite Observation.

Key Parameters

ParameterP zoneB zone
Resolution6,144 px1,536 px
TDI stage12864
Pixel size10 µm × 10 µm40 µm × 40 µm
Full wellLFD: 160 Ke⁻300 Ke⁻
Total noise< 45 e⁻< 60 e⁻
Line rate80 KHz20 KHz
TDI directionBi-directionBi-direction
ADC14-bit14-bit
MTF0.500.50
FPN< 1.2%< 1.2%
PRNU< 1.5%< 1.5%
TID50 Krad50 Krad
SEE75 MeV·mg/cm²75 MeV·mg/cm²

 

 

CMOS Image Sensors

Canon has been manufacturing CMOS sensors since 2000 for exclusive use in Canon products. Building on that expertise and success, Canon is now committed to starting external sales to collaborate with various industries. Canon CMOS sensors feature unique designs to meet the needs of demanding vision applications.